SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FGH40N6S2 is a 600V, N-Channel IGBT from the SMPS II Series. It features low gate charge (35nC typ at VGE=15V) and low plateau voltage (6.5V typ). The device supports continuous collector currents of 75A at 25°C case temperature and 35A at 110°C. Maximum ratings include a pulsed collector current of 180A and power dissipation of 290W at 25°C. Switching characteristics include a typical fall time of 55ns at 25°C and 85ns at 125°C. Avalanche energy capability is rated at 260mJ.
Verify the manufacturer origin as Fairchild Semiconductor or its successor entities like onsemi. Confirm the package type matches the specific suffix requirement, such as TO-247 for the standard FGH40N6S2 variant. Ensure the datasheet revision aligns with the required electrical specifications before procurement.
Select this component for designs prioritizing low gate drive power requirements due to the 35nC gate charge. Evaluate thermal management capabilities against the 290W dissipation rating and derating curve. Consider the 600V breakdown voltage and 180A pulsed current limits when sizing for peak load conditions.
This part belongs to the SMPS II series of Low Gate Charge IGBTs. It shares design lineage with the FGP40N6S2 (TO-220AB) and FGB40N6S2 (TO-263AB). The family focuses on optimizing switching performance for high-frequency power conversion applications.
Direct pin-compatible alternatives within the same series include FGP40N6S2 and FGB40N6S2, differing primarily in package style. Verify that any substitute maintains the 600V rating and comparable switching speeds.