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Product Detailed Parameters
- Description：IGBT TRENCH FS 1000V 80A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 40A
- Power - Max：333 W
- Switching Energy：2.35mJ (on), 1.15mJ (off)
- Input Type：Standard
- Gate Charge：398 nC
- Td (on/off) @ 25°C：29ns/285ns
- Test Condition：600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：78 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGH40T100SMD-F155 is a single N-channel Field Stop Trench IGBT manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 1 kV and a continuous collector current (Ic) of 40 A at 25°C, with a peak pulsed current rating of 80 A. The device exhibits a typical collector-emitter saturation voltage (VCEsat) of 1.9 V. It operates within a junction temperature range of -55°C to +175°C and has a power dissipation capability of 333 W. The component utilizes a TO-247 package for through-hole mounting.
Feature Summary
- Field Stop Trench technology for optimized switching performance
- High thermal stability supporting operation up to 175°C
- Low saturation voltage for reduced conduction losses
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the End-of-Life status before design finalization, as the manufacturer indicates this part is subject to obsolescence. Confirm RoHS compliance details via the official datasheet. Ensure the TO-247 footprint matches the target PCB layout requirements. Check for any specific handling precautions related to high-voltage semiconductor components during assembly.
Selection Notes
Select this component for applications requiring 1 kV blocking voltage and moderate current handling in a standard through-hole package. Compare VCEsat and switching energy losses against alternative 1 kV IGBTs if efficiency is critical. Verify that the gate drive voltage limits align with the specified ±25 V maximum rating to prevent device damage.
Part Context
This device belongs to the FGH40T100SMD series from onsemi, representing their Field Stop Trench IGBT lineup. These components are designed for medium-power switching applications where reliability and thermal performance are essential. The series typically targets industrial and consumer electronics markets requiring robust power control solutions.
Replacement Considerations
Check for direct pin-compatible substitutes within the same voltage and current class. Consider newer generations from the manufacturer if available, ensuring electrical parameters such as VCEsat and switching times meet or exceed original requirements.
