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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
- Power - Max：268 W
- Switching Energy：1.01mJ (on), 297µJ (off)
- Input Type：Standard
- Gate Charge：72.2 nC
- Td (on/off) @ 25°C：19.2ns/65.6ns
- Test Condition：400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr)：31.8 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGH40T65SHD-F155 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop Trench series. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 40 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage (VCEsat) of 1.9 V and supports a power dissipation (Pd) of 333 W. It operates within a temperature range of -55°C to +175°C, utilizes a TO-247 package for through-hole mounting, and accepts a maximum gate-emitter voltage (VGEO) of ±20 V.
Feature Summary
- Field Stop Trench technology designed for high efficiency and low switching losses
- Robust thermal performance with a maximum junction temperature rating of 175°C
- High short-circuit capability suitable for demanding industrial environments
Applications
- Industrial motor drives and inverters
- Uninterruptible Power Supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify the specific suffix F155 against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the component matches the required pinout and thermal characteristics for your PCB layout. Cross-reference the part number with authorized distributors to confirm current availability and authenticity before finalizing procurement plans.
Selection Notes
Select this IGBT when a 650 V blocking voltage and 40 A continuous current are required in a TO-247 form factor. Consider the 1.9 V saturation voltage for conduction loss calculations. Verify that the driving circuit can support the specified ±20 V gate-emitter voltage limits. Ensure the application environment stays within the -55°C to +175°C operating temperature range.
Part Context
This component is part of onsemi's Field Stop Trench IGBT family, which integrates trench gate technology with field stop structures to optimize switching performance. It serves as a discrete replacement or primary switch in medium-power conversion circuits. The FGH40T65SHD-F155 variant specifically denotes the standard tube packaging configuration for this 650 V, 40 A device.
Replacement Considerations
Direct substitutes include FGH40T65SHDF and FGH40T65SHD. Other compatible options from the same series are FGH40T65SQD and FGH40T65SPD. Verify pin compatibility and electrical parameters before substitution.
