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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 40A
- Power - Max：268 W
- Switching Energy：1.59mJ (on), 580µJ (off)
- Input Type：Standard
- Gate Charge：177 nC
- Td (on/off) @ 25°C：20ns/144ns
- Test Condition：400V, 40A, 7Ohm, 15V
- Reverse Recovery Time (trr)：43 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGH40T65UPD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Field-Stop technology to achieve low saturation voltage and high current density. The device is housed in a TO-247 package with a flange mount configuration. Key electrical parameters include a collector-emitter breakdown voltage of 650 V, a continuous collector current of 80 A at 25°C, and a maximum power dissipation of 290 W. The saturation voltage is specified at 1.8 V under standard test conditions. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Field-Stop IGBT technology for optimized switching performance
- High short-circuit capability for robust operation
- Low saturation voltage to minimize conduction losses
Applications
- Induction heating systems
- Uninterruptible Power Supplies (UPS)
- Motor control drives
Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and REACH SVHC declarations as required by regional regulations. Ensure thermal interface material compatibility with the TO-247 flange mount design for adequate heat dissipation during operation.
Selection Notes
Select this component when designing circuits requiring high voltage blocking capability combined with moderate current handling. The 650V rating suits general industrial applications. Consider the thermal resistance characteristics of the TO-247 package for heatsink selection. Verify gate drive requirements align with the specified threshold and maximum gate-emitter voltage limits.
Part Context
This part belongs to the FGH series of Field-Stop IGBTs from onsemi. These devices are engineered for efficiency in medium-power switching applications. The series emphasizes reduced energy loss during both turn-on and turn-off transitions compared to earlier generation technologies.
Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains equivalent saturation voltage and switching speed characteristics to ensure circuit performance stability.
