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The onsemi FGH40T65UQDF-F155 is a Field Stop 4th Generation IGBT featuring a P-channel configuration. It provides a maximum continuous collector current (Ic) of 40 A and a collector-emitter voltage (VCEO) rating of 650 V. The device operates within a temperature range from -55°C to +175°C, with a maximum power dissipation (Pd) of 333 W. Key electrical parameters include a collector-emitter saturation voltage (VceSAT) of 1.6 V and a gate-emitter voltage limit of ±20 V. It utilizes a TO-247 G03 package for through-hole mounting.
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the suffix matches the required specifications. Ensure compatibility with existing thermal management solutions. Check for any recent product change notifications or lifecycle status updates directly from onsemi sources.
Select this component based on its 650 V blocking capability and 40 A current handling. Consider the TO-247 G03 package for adequate heat sinking requirements. Evaluate the 1.6 V saturation voltage for conduction loss calculations in the target application design.
This device belongs to the Field Stop 4th Generation series, designed for high-efficiency power switching applications. It represents an evolution in IGBT technology focusing on reduced switching losses while maintaining robust avalanche ruggedness suitable for demanding industrial environments.
Publicly confirmed substitute part numbers are not available in the provided data. Consult official cross-reference guides for potential alternatives.