FGH40T70SHD-F155

Overview

The FGH40T70SHD-F155 is a Field Stop Trench Insulated Gate Bipolar Transistor manufactured by onsemi. It features a single configuration with a maximum collector-emitter voltage of 700 V and a continuous collector current of 80 A at 25°C. The device exhibits a typical saturation voltage of 1.9 V and supports a power dissipation of 333 W. It operates within a temperature range from -55°C to +175°C, utilizing silicon technology in a TO-247 package.

Feature Summary

• Field Stop Trench technology for optimized switching performance
• High thermal stability supporting junction temperatures up to 175°C
• Low saturation voltage for reduced conduction losses

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Switched-mode power supplies (SMPS)

Procurement Notes

Verify the specific suffix F155 against the official datasheet to confirm packaging details and compliance status. Check for Product Change Notifications (PCN) regarding manufacturing site or material updates. Confirm availability through authorized distributors as end-of-life status may vary by region.

Selection Notes

Select this component for applications requiring high voltage blocking capability and robust thermal performance. Ensure gate drive voltages remain within the specified limits to prevent damage. Verify that the thermal management solution can handle the rated power dissipation under worst-case operating conditions.

Part Context

This part belongs to the FGH40T series of Field Stop IGBTs from onsemi. These devices are designed for medium-power applications where efficiency and reliability are critical. The series typically offers improved switching characteristics compared to standard trench technologies.

Replacement Considerations

Consult the official replacement guide for direct equivalents. Consider parts with matching voltage, current, and package specifications if sourcing alternatives.