FGH4L40T120LQD

$6.40

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-

SKU:9f9ff58cd591 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 40A
Power - Max：306 W
Switching Energy：1.04mJ (on), 1.35mJ (off)
Input Type：Standard
Gate Charge：227 nC
Td (on/off) @ 25°C：42ns/218ns
Test Condition：600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：59 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：TO-247-4L
Grade：-
Qualification：-

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FGH4L40T120LQD

Overview

The FGH4L40T120LQD is a single Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing Ultra Field Stop Trench construction. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C. The device has a typical saturation voltage of 1.55 V and a power dissipation rating of 306 W. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247-4L through-hole package.

Feature Summary

Ultra Field Stop Trench technology for optimized performance
Low saturation voltage and fast soft reverse recovery diode
Positive temperature coefficient for easy parallel operation

Applications

Solar inverters
Uninterruptible Power Supply (UPS) systems
Industrial switching applications
Welding equipment

Procurement Notes

Verify the specific suffix LQD against the official datasheet to confirm pinout configuration and electrical characteristics. Ensure thermal management solutions support the specified power dissipation limits. Confirm RoHS compliance status with the manufacturer prior to integration into final assemblies.

Selection Notes

Select this component for high-efficiency power conversion requiring low conduction losses. The integrated fast soft recovery diode aids in reducing switching noise. Consider the TO-247-4L package for robust through-hole mounting in industrial environments where thermal stability is critical.

Part Context

This IGBT belongs to the FGH4L40Tx series, designed for demanding power applications. It leverages onsemi's field stop technology to balance switching speed and conduction efficiency. The device serves as a key switching element in medium-power inverter topologies.