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The onsemi FGH50T65SQD-F155 is a P-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop 4th Generation series. It features a TO-247 G03 package with three pins for through-hole mounting. The device supports a maximum continuous collector current (Ic) of 50 A and a collector-emitter voltage (Vceo) of 650 V. Key electrical parameters include a maximum power dissipation (Pd) of 333 W, a collector-emitter saturation voltage (VceSAT) of 1.6 V, and a gate-emitter voltage rating (VGEO) of ±30 V. It operates within a temperature range of -55°C to 175°C and carries RoHS certification.
Verify the specific suffix F155 against official datasheets to confirm packaging details. Ensure compatibility with existing thermal management solutions given the 333 W dissipation rating. Confirm RoHS compliance requirements for the target assembly process.
Select this component when a 650 V blocking capability and 50 A continuous current are required in a TO-247 form factor. Consider the 1.6 V saturation voltage for conduction loss calculations. Verify that the driving circuit can support the ±30 V gate-emitter voltage limit safely.
This part belongs to onsemi's Field Stop IGBT lineup, designed for medium-power switching applications. It shares architectural similarities with other members like the FGH75T65SHD but offers lower current handling. The TO-247 package provides a balance between thermal performance and board space efficiency.
Direct substitutes may include the FGH50T65UPD or AFGHL50T65SQD from the same manufacturer family. Verify pinout compatibility and thermal resistance values before substitution.