FGH50T65SQD-F155

FGH50T65SQD-F155

$4.62
  • Description:IGBT TRENCH FS 650V 100A TO-247
  • Series:-

SKU:6e8923dc14bb Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 100A TO-247
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 50A
  • Power - Max:268 W
  • Switching Energy:180µJ (on), 45µJ (off)
  • Input Type:Standard
  • Gate Charge:99 nC
  • Td (on/off) @ 25°C:22ns/105ns
  • Test Condition:400V, 12.5A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr):31 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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FGH50T65SQD-F155

Overview

The onsemi FGH50T65SQD-F155 is a P-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop 4th Generation series. It features a TO-247 G03 package with three pins for through-hole mounting. The device supports a maximum continuous collector current (Ic) of 50 A and a collector-emitter voltage (Vceo) of 650 V. Key electrical parameters include a maximum power dissipation (Pd) of 333 W, a collector-emitter saturation voltage (VceSAT) of 1.6 V, and a gate-emitter voltage rating (VGEO) of ±30 V. It operates within a temperature range of -55°C to 175°C and carries RoHS certification.

Feature Summary

  • Field Stop 4th Generation technology for optimized switching performance
  • High thermal stability with a maximum junction temperature of 175°C
  • Robust packaging suitable for high-power applications

Applications

  • Industrial motor drives
  • Switched-mode power supplies
  • Inverter circuits

Procurement Notes

Verify the specific suffix F155 against official datasheets to confirm packaging details. Ensure compatibility with existing thermal management solutions given the 333 W dissipation rating. Confirm RoHS compliance requirements for the target assembly process.

Selection Notes

Select this component when a 650 V blocking capability and 50 A continuous current are required in a TO-247 form factor. Consider the 1.6 V saturation voltage for conduction loss calculations. Verify that the driving circuit can support the ±30 V gate-emitter voltage limit safely.

Part Context

This part belongs to onsemi's Field Stop IGBT lineup, designed for medium-power switching applications. It shares architectural similarities with other members like the FGH75T65SHD but offers lower current handling. The TO-247 package provides a balance between thermal performance and board space efficiency.

Replacement Considerations

Direct substitutes may include the FGH50T65UPD or AFGHL50T65SQD from the same manufacturer family. Verify pinout compatibility and thermal resistance values before substitution.

FGH50T65SQD-F155FGH50T65SQD-F155
$4.62
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