FGH60N60SFTU

Overview

The FGH60N60SFTU is a single N-channel Field Stop IGBT manufactured by Fairchild Semiconductor, now part of onsemi. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 60 A at 25°C, with a peak pulsed current capability of 120 A. The device utilizes novel Field Stop technology to achieve low saturation voltage and fast switching characteristics. It is housed in a TO-247-3 package designed for through-hole mounting, offering a power dissipation rating of 378 W. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Utilizes novel Field Stop IGBT technology for optimized performance in high-frequency applications.
• Provides low saturation voltage to minimize conduction losses during operation.
• Features fast switching capabilities suitable for demanding power conversion environments.
• Designed with high input impedance for efficient gate drive integration.

Applications

• Induction heating systems requiring robust high-current switching.
• Uninterruptible Power Supplies (UPS) utilizing hard-switching topologies.
• Switch Mode Power Supplies (SMPS) where efficiency is critical.
• Power Factor Correction (PFC) circuits in industrial power supplies.

Procurement Notes

Verify the specific suffix against official datasheets, as variations may indicate different packaging or compliance standards. Confirm availability status, as this component may be subject to end-of-life notices or discontinuation by the manufacturer. Ensure that sourcing channels provide valid traceability documentation to guarantee authenticity and prevent counterfeit components from entering the supply chain.

Selection Notes

Select this component when designing circuits that require a balance between low conduction loss and manageable switching speed at 600V ratings. Consider the thermal management requirements associated with the TO-247 package and the 378W power dissipation limit. Evaluate gate drive requirements to ensure compatibility with the specified threshold voltages and charge parameters for optimal switching performance.

Part Context

This device belongs to the FGH60N60SF series of Field Stop IGBTs originally developed by Fairchild Semiconductor. Following the acquisition, production and documentation are managed under the onsemi brand. The series is engineered to replace older planar IGBT technologies, offering superior performance metrics for medium-power industrial applications while maintaining pin compatibility with previous generations.

Replacement Considerations

Direct replacements include the FGH60N60SFDTU and FGH60N60SFD variants within the same product family. Verify electrical parameter equivalence, particularly saturation voltage and switching times, before substituting with other 600V 60A IGBTs from different manufacturers.

FAQ

What is the maximum collector-emitter saturation voltage for this IGBT?

The typical collector-emitter saturation voltage (VCE(sat)) is 2.3 V at a collector current of 60 A.

Does this component include an integrated freewheeling diode?

No, the FGH60N60SFTU is a standalone IGBT transistor without an integrated anti-parallel diode.

What is the recommended operating junction temperature range?

The device is rated for a minimum operating temperature of -55°C and a maximum junction temperature of +150°C.