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Product Detailed Parameters
- Description：IGBT 600V 75A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：320 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 40A
- Power - Max：625 W
- Switching Energy：400µJ (on), 310µJ (off)
- Input Type：Standard
- Gate Charge：140 nC
- Td (on/off) @ 25°C：18ns/70ns
- Test Condition：390V, 40A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGH60N6S2 is a 600V, N-Channel IGBT from the SMPS II series. It features low gate charge and low plateau voltage for fast switching. Maximum ratings include a collector current of 75A continuous at 25°C and 110°C, with a pulsed current of 320A. Power dissipation reaches 625W at 25°C case temperature. The junction temperature range spans -55°C to 150°C. Avalanche energy capability is rated at 700mJ. The device utilizes a TO-247 package.
Feature Summary
- SMPS II technology designed for high-frequency operation
- Low gate charge reduces gate drive power requirements
- Uninterruptible Supply (UIS) rated for avalanche robustness
- Fast switching characteristics suitable for resonant topologies
Applications
- Power Factor Correction (PFC) circuits
- Full bridge and half bridge topologies
- Push-Pull circuits
- Uninterruptible power supplies (UPS)
- Zero voltage and zero current switching circuits
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision A2 matches physical markings. Ensure electrostatic discharge handling protocols are followed during assembly. Check thermal interface material compatibility for the TO-247 package. Validate supply chain documentation against original manufacturer records.
Selection Notes
Evaluate thermal resistance requirements based on operating frequency and load current. Consider gate resistance values to optimize switching speed versus electromagnetic interference. Verify short-circuit withstand time suitability for protection circuitry design. Assess avalanche energy limits against inductive load conditions. Match package mounting constraints with system mechanical design.
Part Context
This component belongs to the Fairchild Semiconductor SMPS II series of insulated gate bipolar transistors. It represents a specific variant optimized for switched-mode power supply applications requiring low conduction loss and fast switching speeds. The part number indicates its voltage class and current rating within the broader product family.
Replacement Considerations
Direct substitutes must match the 600V rating, TO-247 package, and electrical characteristics. Verify equivalent gate charge and saturation voltage levels. Ensure compatible thermal resistance and maximum junction temperature specifications. Confirm pinout alignment for collector, emitter, and gate terminals.
