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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 120A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 60A
- Power - Max：333 W
- Switching Energy：227µJ (on), 100µJ (off)
- Input Type：Standard
- Gate Charge：79 nC
- Td (on/off) @ 25°C：20.8ns/102ns
- Test Condition：400V, 15A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：34.6 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGH60T65SQD-F155 is a P-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop 4th Generation series. It features a TO-247 G03 package designed for through-hole mounting. Key electrical parameters include a maximum continuous collector current (Ic) of 60 A and a maximum collector-emitter voltage (Vceo) of 650 V. The device exhibits a maximum collector-emitter saturation voltage (VceSAT) of 1.6 V and a maximum power dissipation (Pd) of 333 W. It operates within a temperature range of -55°C to 175°C, with a rated energy capacity of 50 mJ.
Feature Summary
- Field Stop 4th Generation technology for optimized switching performance
- High thermal stability supporting operation up to 175°C junction temperature
- Robust single IGBT configuration in a standard TO-247 G03 housing
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix F155 against official datasheets to confirm packaging details and compliance status. Ensure the procurement channel provides valid RoHS certification documentation. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm that the TO-247 G03 footprint matches the target PCB design requirements before finalizing orders.
Selection Notes
Select this component when a 650 V blocking voltage and 60 A continuous current rating are required. The 1.6 V saturation voltage indicates moderate conduction losses suitable for general-purpose applications. Consider the 333 W power dissipation limit and ensure adequate heatsinking for the intended thermal environment. Verify that the P-channel configuration aligns with the circuit topology requirements.
Part Context
This IGBT is part of onsemi's Field Stop 4th Generation lineup, which utilizes advanced trench gate technology. The series targets high-efficiency power switching applications. The TO-247 G03 package provides a standardized mechanical interface for through-hole assembly, facilitating integration into existing industrial power electronics designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides or contact the manufacturer directly for verified alternative components.
