FGH75T65SHDTLN4

$4.07

Description：IGBT TRENCH FS 650V 150A TO-247
Series：-

SKU:7e8aed196749 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 150A TO-247
Series：-
Mfr：onsemi
Package：Bulk,Tube,Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：150 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
Power - Max：455 W
Switching Energy：1.06mJ (on), 1.56mJ (off)
Input Type：Standard
Gate Charge：126 nC
Td (on/off) @ 25°C：55ns/189ns
Test Condition：400V, 75A, 15Ohm, 15V
Reverse Recovery Time (trr)：36 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：TO-247-4
Grade：-
Qualification：-

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FGH75T65SHDTLN4

Overview

The FGH75T65SHDTLN4 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, utilizing Field Stop technology. It is housed in a TO-247-4 package for through-hole mounting. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 150 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.6 V and a power dissipation rating of 455 W. The component operates within a temperature range of -55°C to +175°C.

Feature Summary

Field Stop technology designed for low conduction and switching losses
Positive temperature coefficient facilitates parallel operation
Integrated fast recovery anti-parallel diode
High thermal stability with a maximum junction temperature of 175°C

Applications

Uninterruptible Power Supply (UPS) systems
Solar inverters
Electric welding equipment
Energy Storage Systems (ESS)
Power Factor Correction (PFC) circuits

Procurement Notes

Verify the specific suffix 'LN4' against official manufacturer documentation to confirm pinout configuration and internal diode specifications. Ensure the ordering part number matches the exact datasheet revision required for your design. Cross-reference the TO-247-4 package dimensions with your PCB footprint library to guarantee mechanical compatibility during assembly.

Selection Notes

Select this component for applications requiring high efficiency and robust thermal performance. The 650V rating suits medium-voltage AC/DC conversion tasks. Consider the 150A current capability for high-power density designs. Evaluate the gate charge characteristics against your driver capabilities to optimize switching speed and minimize electromagnetic interference in the target circuit topology.

Part Context

This IGBT belongs to the FGH75T65SHD series from onsemi, engineered for high-performance power switching. The series targets industrial and renewable energy markets where reliability under harsh conditions is critical. The TO-247-4 package provides enhanced thermal management compared to standard three-terminal variants, supporting higher power densities in compact form factors.