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The FGHL40T65LQDT is a Field Stop Trench IGBT with an integrated diode, rated at 650 V collector-to-emitter voltage and 40 A continuous collector current. It utilizes onsemi's fourth-generation low VCE(sat) technology to achieve a typical saturation voltage of 1.15 V at 40 A. The device operates within a junction temperature range of -55°C to +175°C and features a positive temperature coefficient for parallel operation. Packaged in a TO-247-3L (CASE 340CX), it offers optimized switching characteristics and tight parameter distribution.
Verify the specific ordering suffix LQDT against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and ensure the component meets all automotive or industrial qualification standards required by the target application before finalizing procurement.
Select this component for designs requiring high current capability and low conduction losses. Ensure the gate drive circuit supports the specified 15 V operating voltage and that the thermal management system can handle the maximum power dissipation ratings at the intended operating junction temperatures.
This part belongs to onsemi's FS3/FS4 field stop trench IGBT family. It integrates a fast recovery diode in a single TO-247-3L package, designed for high-efficiency power conversion applications where low saturation voltage and robust switching performance are critical requirements.
Check datasheets for alternative models like FGHL40T65MQD or FGHL40T65SQD to verify pinout compatibility and electrical parameter alignment before substitution.