FGHL40T65MQD

$4.39

Description：IGBT TRENCH FS 650V 80A TO-247-3
Series：-

SKU:5bc89a2954b5 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO-247-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 40A
Power - Max：238 W
Switching Energy：860µJ (on), 520µJ (off)
Input Type：Standard
Gate Charge：86 nC
Td (on/off) @ 25°C：22ns/109ns
Test Condition：400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：33 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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FGHL40T65MQD

Overview

The onsemi FGHL40T65MQD is a Field Stop Trench IGBT utilizing 4th generation mid-speed technology with a full current rated copak diode. It features a maximum junction temperature of 175°C and a positive temperature coefficient for easy parallel operation. The device offers a collector-emitter voltage (VCES) of 650 V, a continuous collector current (IC) of 80 A at 25°C, and a typical saturation voltage (VCE(sat)) of 1.45 V at IC = 40 A. Maximum power dissipation is 238 W at 25°C case temperature. It is housed in a TO-247-3L package.

Feature Summary

Field stop 4th generation mid-speed IGBT technology
Full current rated copak diode integration
Positive temperature coefficient for parallel operation

Applications

Solar Inverter
UPS, ESS
PFC, Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under varying operating temperatures. Confirm RoHS compliance requirements match project specifications before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high current capability and low saturation voltage. The positive temperature coefficient facilitates reliable parallel operation without complex balancing circuits. Evaluate switching losses and gate charge characteristics against the target frequency and efficiency requirements of the power conversion topology.

Part Context

This part belongs to the Field Stop Trench IGBT series from onsemi. It integrates a fast recovery diode within the same package structure. The technology focuses on optimizing switching performance while maintaining robustness for industrial power electronics applications.

Replacement Considerations

Check datasheet compatibility for pinout and electrical parameters when substituting. Verify thermal resistance and package dimensions match existing PCB layouts. Ensure switching speed and voltage ratings align with circuit design constraints.