FGHL50T65LQDTL4

$4.45

Description：IGBT TRENCH FS 650V 80A TO-247
Series：-

SKU:c3bace97890b Category: Single IGBTs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 50A
Power - Max：341 W
Switching Energy：410µJ (on), 860µJ (off)
Input Type：Standard
Gate Charge：509 nC
Td (on/off) @ 25°C：28ns/424ns
Test Condition：400V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：75 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：TO-247-4L
Grade：-
Qualification：-

Download product information

FGHL50T65LQDTL4

Overview

The FGHL50T65LQDTL4 is a Field Stop Trench IGBT from onsemi, utilizing 4th generation Low VCE(Sat) technology. It features a 650 V collector-emitter voltage and a continuous collector current of 50 A at TC = 100°C (80 A at TC = 25°C). The device has a typical saturation voltage of 1.15 V at IC = 50 A and TJ = 25°C. It includes a co-packaged soft and fast recovery diode with a forward current of 50 A at TC = 100°C. Maximum power dissipation is 341 W at TC = 25°C. The component operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247-4LD package.

Feature Summary

Field Stop 4th generation Low VCE(Sat) IGBT technology
Full current rated copack Diode technology
Positive Temperature Coefficient for Easy Parallel Operating
Co-packed with Soft and Fast Recovery Diode

Applications

Solar Inverter
UPS, ESS
PFC, Converters

Procurement Notes

Verify the specific ordering suffix 'TL4' against official documentation to confirm tube packaging and traceability codes. Ensure that the TO-247-4LD pinout matches the target circuit design, specifically distinguishing between the Kelvin emitter and power emitter connections. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement specifications.

Selection Notes

Select this component when low conduction losses are critical due to its 1.15 V typical saturation voltage. The positive temperature coefficient facilitates safe parallel operation for higher current applications. Verify thermal management requirements against the 0.44 °C/W junction-to-case resistance. Ensure the gate drive voltage supports the specified 15 V operating condition for optimal switching performance.

Part Context

This part belongs to onsemi's Field Stop Trench IGBT family, designed for high-efficiency power conversion. It integrates advanced trench gate technology with a full-rated anti-parallel diode. The device targets industrial and renewable energy applications requiring robust performance under high thermal stress and demanding switching conditions.