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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 50A
- Power - Max：268 W
- Switching Energy：1mJ (on), 850µJ (off)
- Input Type：Standard
- Gate Charge：99 nC
- Td (on/off) @ 25°C：50ns/336ns
- Test Condition：400V, 50A, 30Ohm, 15V
- Reverse Recovery Time (trr)：79 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4L
- Grade：-
- Qualification：-
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Overview
The FGHL50T65MQDTL4 is a Field Stop 4th Generation medium-speed IGBT manufactured by onsemi. It features a 650V collector-emitter voltage rating and operates within a junction temperature range of -55°C to 175°C. The device utilizes a TO-247-3L package. At a case temperature of 25°C, the continuous collector current reaches 80A, while at 100°C, it maintains 50A. The typical saturation voltage is 1.45V at 50A. This component integrates a full-rated current diode in a single package.
Feature Summary
- Field Stop 4th Generation technology for optimized performance
- Positive temperature coefficient facilitating parallel operation
- Smooth switching characteristics with tight parameter distribution
- Integrated full-rated current diode
Applications
- Solar inverters
- Uninterruptible power supplies (UPS)
- Energy storage systems (ESS)
- Power factor correction (PFC) circuits
Procurement Notes
Verify the specific ordering suffix TL4 against official datasheets to confirm package type and internal configuration. Ensure compatibility with RoHS standards if environmental compliance is required. Cross-reference the manufacturer's part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component for applications requiring high efficiency and reliable parallel operation due to its positive temperature coefficient. Consider the 175°C maximum junction temperature for thermal management design. Evaluate the integrated diode feature to simplify circuit topology compared to discrete solutions.
Part Context
This IGBT belongs to onsemi's FS4 series, representing the fourth generation of Field Stop technology. It is designed to balance low conduction losses with controlled switching speeds. The medium-speed variant targets applications where electromagnetic interference reduction is critical alongside high efficiency.
Replacement Considerations
The FGHL50T65SQ is a related high-speed variant within the same series. Verify switching speed requirements and gate drive compatibility when considering substitutes. Ensure voltage ratings and package dimensions match the existing design constraints.
