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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 75A
- Power - Max：469 W
- Switching Energy：1.88mJ (on), 2.38mJ (off)
- Input Type：Standard
- Gate Charge：793 nC
- Td (on/off) @ 25°C：48ns/568ns
- Test Condition：400V, 75A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：152 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGHL75T65LQDT is a Field Stop Trench IGBT utilizing fourth-generation technology. It features a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 75 A at 25°C. The device operates within a junction temperature range of -55°C to 175°C, with a maximum power dissipation (Pd) of 469 W. Packaged in a surface-mount TO-247-3L format measuring 15.87 mm in length and 4.82 mm in height, it supports a maximum gate-emitter voltage (VGEO) of ±20 V.
Feature Summary
- Fourth-generation Field Stop Trench technology for optimized switching performance
- Positive temperature coefficient enabling efficient parallel operation
- High thermal stability supporting operation up to 175°C junction temperature
Applications
- Totem-pole bridgeless Power Factor Correction (PFC)
- DC-DC converter modules
- Solar inverters
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific suffix 'QDT' against official datasheets to confirm surface-mount package compatibility and RoHS compliance status. Ensure the ordering part number matches the exact electrical specifications required for the target circuit design before procurement.
Selection Notes
Select this component for applications requiring low conduction and switching losses in high-frequency environments. Verify that the PCB layout accommodates the TO-247-3L surface-mount footprint and that the thermal management system can handle the specified 469 W power dissipation under operating conditions.
Part Context
This device belongs to the FS4 IGBT series from onsemi, designed for high-efficiency power conversion. It represents an evolution in trench gate technology, offering improved robustness and tighter parameter distribution compared to previous generations, suitable for demanding industrial and renewable energy applications.
Replacement Considerations
Cross-reference with other FS4 series variants such as FGHL75T65MQD or AFGHL75T65SQDT. Confirm package type (through-hole vs. surface-mount) and specific electrical tolerances match the original design requirements before substitution.
