FGL35N120FTDTU

Overview

The FGL35N120FTDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, now part of onsemi. It features a Field-Stop Trench technology design optimized for high-efficiency power switching applications. The device is housed in a TO-3P package and supports a collector-emitter voltage (Vces) of 1200 V with a continuous collector current (Ic) of 35 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage (Vcesat) of approximately 2.4 V at rated current and a typical turn-off time of 180 ns. The component operates within a junction temperature range of -55°C to +175°C and offers robust avalanche energy capability.

Feature Summary

• Field-Stop Trench technology for reduced switching losses and improved thermal performance
• High short-circuit withstand capability for enhanced system reliability
• Soft recovery integrated fast diode minimizing reverse recovery charge
• Low saturation voltage for efficient conduction under load

Applications

• Induction heating systems
• Switched-mode power supplies (SMPS)
• Motor control drives
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the manufacturer origin carefully, as Fairchild Semiconductor's semiconductor business was acquired by onsemi. Ensure the datasheet corresponds to the specific 'F' suffix variant which denotes Field-Stop technology. Confirm RoHS compliance status and packaging type (TO-3P tube) against current supply chain documentation before finalizing orders.

Selection Notes

Select this component when a 1200 V rating is required for high-voltage DC bus applications. The 35 A current rating suits moderate-power industrial loads. Compare Vcesat and switching times against competitor models like the FGA25N120ANTD if lower current or different package constraints exist. Ensure gate drive voltage compatibility with the specified 20 V maximum rating.

Part Context

This IGBT belongs to the FGL series from Fairchild, characterized by Field-Stop trench technology. It serves as a direct successor or alternative to older planar IGBT designs, offering superior switching performance. The TO-3P package provides mechanical robustness suitable for industrial environments requiring through-hole mounting.

Replacement Considerations

Direct pin-compatible substitutes may include the FGL35N120FDTU or FGL35N120ANDTU, depending on whether Field-Stop or Anti-Parallel Diode variants are needed. Verify thermal resistance and exact switching parameters against the original design requirements before substitution.