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Product Detailed Parameters
- Description：IGBT 600V 28A TO-220-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：28 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 7A
- Power - Max：125 W
- Switching Energy：25µJ (on), 58µJ (off)
- Input Type：Standard
- Gate Charge：30 nC
- Td (on/off) @ 25°C：7.7ns/87ns
- Test Condition：390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The FGP20N6S2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 28A at 25°C. The device is housed in a TO-220AB package with three pins. Its maximum power dissipation is rated at 125W. This component belongs to the SMPS II Series, designed for switching applications requiring robust performance within these electrical limits.
Feature Summary
- Single N-channel IGBT configuration
- SMPS II Series classification
- TO-220AB through-hole packaging
Applications
- Switching Mode Power Supplies (SMPS)
- General purpose switching circuits
Procurement Notes
Verify the manufacturer origin carefully, as this part number appears across multiple entities including ON Semiconductor, Rochester Electronics, and Fairchild. Confirm the specific datasheet version matches your design requirements. Ensure the TO-220AB package type aligns with your thermal and mechanical constraints before finalizing procurement.
Selection Notes
Select this component when a 600V, 28A N-channel IGBT is required for standard switching applications. The TO-220AB package suits designs needing reliable through-hole mounting. Verify that the 125W power dissipation capability meets the thermal management strategy of the target circuit under expected operating conditions.
Part Context
This component is part of the broader IGBT module and discrete transistor market. It shares the FGP20N6S2 designation with variants from other manufacturers like ON Semiconductor and Rochester Electronics, indicating potential cross-manufacturing or legacy branding. The 'D' suffix variant also exists in listings, suggesting possible minor packaging or revision differences.
Replacement Considerations
Direct substitutes include the FGP20N6S2 D variant. Other generic replacements must match the 600V Vceo, 28A Ic, and TO-220AB package specifications. Verify pinout compatibility and thermal characteristics before substituting.
