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Product Detailed Parameters
- Description：IGBT 600V 45A TO-220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：108 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
- Power - Max：167 W
- Switching Energy：55µJ (on), 100µJ (off)
- Input Type：Standard
- Gate Charge：23 nC
- Td (on/off) @ 25°C：6ns/40ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：46 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The FGP30N6S2D is a 600V N-channel IGBT from the SMPS II series, packaged in TO-220AB. It integrates an anti-parallel Stealth diode and features low gate charge (23 nC typ at VGE=15V) and low plateau voltage (6.5V typ). The device supports continuous collector currents of 45 A at 25°C case temperature and 20 A at 110°C. It offers a switching safe operating area capability of 60 A at 600V and is rated for 150 mJ pulsed avalanche energy. Typical fall time is 90 ns at TJ=125°C.
Feature Summary
- Low gate charge and low plateau voltage reduce gate drive power requirements and shorten delay times.
- Integrated anti-parallel Stealth diode provides fast switching speed with low reverse recovery characteristics.
- Rated for unclamped inductive switching (UIS) to handle avalanche energy conditions.
Applications
- Power Factor Correction (PFC) circuits
- Full bridge and half bridge topologies
- Push-Pull circuits
- Uninterruptible power supplies (UPS)
- Zero voltage and zero current switching circuits
Procurement Notes
Verify the specific package variant required, as the datasheet covers multiple packages including TO-220AB, TO-247, and TO-263AB. Confirm that the TO-220AB version matches the exact ordering suffix FGP30N6S2D. Ensure handling precautions are followed due to electrostatic discharge susceptibility inherent to IGBT gate structures.
Selection Notes
Select this component for high-voltage switched-mode power supply applications requiring low conduction loss and fast switching. Evaluate thermal resistance and junction temperature limits against the expected load current. Consider the UIS rating if the application involves potential inductive load spikes or short-circuit conditions.
Part Context
This part belongs to the Fairchild Semiconductor SMPS II Series of Low Gate Charge IGBTs. It shares specifications with the FGH30N6S2D (TO-247) and FGB30N6S2D (TO-263AB), differing primarily in the mechanical package form factor while maintaining identical electrical performance characteristics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with other manufacturers requires independent verification of electrical parameters and package dimensions.
FAQ
What is the typical turn-off energy loss?
The typical turn-off energy loss (EOFF) is 100 µJ at TJ = 25°C and increases to 250 µJ at TJ = 125°C under standard test conditions.
Does the device have an internal Zener diode?
No, the device does not have an internal monolithic Zener diode from gate to emitter. External gate protection is recommended if required.
What is the maximum collector-emitter breakdown voltage?
The Collector to Emitter Breakdown Voltage (BVCES) is rated at 600 V.
