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Product Detailed Parameters
- Description：IGBT TRENCH 450V TO-220F-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：450 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：1.5V @ 15V, 20A
- Power - Max：51.6 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220F-3
- Grade：-
- Qualification：-
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Overview
The FGPF45N45TTU is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Fairchild Semiconductor. It features a TO-220F-3 through-hole package designed for high-power switching applications. Key electrical specifications include a maximum collector-emitter voltage of 450 V and a pulse collector current rating of 180 A. The device exhibits a maximum power dissipation of 51.6 W and a typical gate charge of 100 nC. The saturation voltage is specified as 1.5 V maximum at a gate-emitter voltage of 15 V and a collector current of 20 A. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Utilizes trench gate technology to achieve low conduction losses and improved switching performance compared to standard planar designs.
Applications
- Switch-mode power supplies
- Motor control inverters
- High-frequency DC-DC converters
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to the part's discontinued status. Confirm RoHS compliance and REACH registration details via official datasheets. Ensure storage conditions adhere to moisture sensitivity level 1 requirements to prevent package damage prior to soldering.
Selection Notes
Select this component for circuits requiring robust 450 V blocking capability with moderate current handling in a through-hole form factor. Evaluate thermal management strategies carefully given the 51.6 W power dissipation limit. Compare gate charge characteristics against alternative IGBTs to optimize driver circuit design and minimize switching losses in high-frequency operations.
Part Context
This device belongs to the FGPF series of trench-gate IGBTs from onsemi. The series is engineered for efficiency in medium-power industrial applications. The specific model integrates advanced trench technology to reduce forward voltage drop while maintaining reliable operation under varying thermal loads common in power electronics systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing PCB footprints and thermal constraints when considering alternative IGBT models from other manufacturers.
