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Product Detailed Parameters
- Description：IGBT TRENCH 300V 70A TO-220F
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：300 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.5V @ 15V, 20A
- Power - Max：49.2 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：125 nC
- Td (on/off) @ 25°C：32ns/175ns
- Test Condition：200V, 40A, 15Ohm, 15V
- Reverse Recovery Time (trr)：21 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220F
- Grade：-
- Qualification：-
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Overview
The FGPF70N30TDTU is a single trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a 300V collector-emitter breakdown voltage and supports a maximum pulsed collector current of 160A. The device exhibits a typical on-state voltage of 1.5V at 20A with a 15V gate drive. With a maximum power dissipation of 49.2W, it utilizes a TO-220F full-pack through-hole package. Key electrical characteristics include a gate charge of 71nC and an operating junction temperature range from -55°C to 150°C.
Feature Summary
- Utilizes trench-gate technology for optimized switching performance
- Designed for high-voltage applications with 300V blocking capability
- Robust thermal management via TO-220F through-hole packaging
Applications
- Motor control systems
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify component authenticity due to potential availability from third-party distributors. Confirm that the specific suffix 'TD' corresponds to the required tape-and-reel or bulk packaging variant if applicable, as standard listings may indicate bulk. Check for obsolescence status, as this part number has been identified as discontinued in some sources. Ensure compatibility with existing PCB footprints for TO-220F packages before procurement.
Selection Notes
Select this IGBT for low-to-medium power applications requiring 300V isolation. Consider the 1.5V Vce(on) at 20A for efficiency calculations. Evaluate thermal resistance requirements given the 49.2W power rating. Compare against newer replacements if long-term supply stability is critical, as the original manufacturer line may have evolved.
Part Context
This component belongs to the single IGBT family from Fairchild Semiconductor, now part of ON Semiconductor. It represents a standard discrete power switch designed for general-purpose industrial electronics. The TO-220F package provides mechanical stability and heat sinking capabilities suitable for board-mounted implementations.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult official replacement guides from ON Semiconductor for updated equivalents.
