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The FGY4L100T120SWD is a Field Stop VII (FS7) N-channel IGBT with an integrated Gen7 diode, housed in a TO-247-4LD package. It features a 1200 V collector-emitter voltage rating and supports a continuous collector current of 100 A at 100°C or 200 A at 25°C. The device exhibits a typical saturation voltage of 1.7 V at 100 A and 25°C. Switching losses are rated at 2.8 mJ for turn-on and 3.5 mJ for turn-off under standard test conditions. Thermal resistance from junction to case is typically 0.14 °C/W for the IGBT and 0.29 °C/W for the diode.
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the procurement channel provides valid traceability for the TO-247-4LD component. Cross-reference the manufacturer part number with authorized distributor lists to avoid counterfeit components. Confirm RoHS compliance requirements match the project specifications before finalizing orders.
Select this component for applications requiring high efficiency in solar inverters, UPS, and energy storage systems. The FS7 technology offers superior switching performance compared to previous generations. Consider the positive temperature coefficient when designing circuits that require parallel device configurations. Verify that the gate drive circuitry aligns with the specified threshold and charge requirements for optimal switching times.
This device belongs to onsemi's FS7 IGBT family, designed for high-efficiency power conversion. It integrates advanced field stop technology with a specialized diode to minimize energy waste. The TO-247-4LD package facilitates efficient heat dissipation and reliable mounting in industrial power electronics environments.
Direct replacements within the same series include FGY4L75T120SWD and FGY4L140T120SWD. These alternatives share the FS7 architecture and TO-247-4LD form factor but differ in current ratings. Evaluate thermal management and switching speed requirements when substituting these parts.
The maximum operating junction temperature is 175°C.
It allows for automatic current balancing among parallel devices, preventing thermal runaway and ensuring stable operation under high load conditions.
The typical VCE(sat) is 1.7 V when tested at IC = 100 A and VGE = 15 V.