FGY75T95SQDT

Description：IGBT TRENCH FS 950V 150A TO-247
Series：-

SKU:e4919c89b0cf Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 950V 150A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：950 V
Current - Collector (Ic) (Max)：150 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.11V @ 15V, 75A
Power - Max：434 W
Switching Energy：8.8mJ (on), 3.2mJ (off)
Input Type：Standard
Gate Charge：137 nC
Td (on/off) @ 25°C：28.8ns/117ns
Test Condition：600V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：259 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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FGY75T95SQDT

Overview

The FGY75T95SQDT is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter voltage rating of 950V and a continuous collector current capacity of 150A. The device operates within a maximum junction temperature range up to +175°C. Key electrical parameters include a collector-emitter saturation voltage of 1.69V at rated conditions and a power dissipation capability of 434W. The component is housed in a TO-247 package with three pins, including a tab for thermal management.

Feature Summary

High-voltage insulation gate bipolar transistor architecture designed for robust switching performance
Optimized low saturation voltage characteristics to minimize conduction losses
Thermal design supporting high power dissipation in industrial environments

Applications

Industrial motor drives and inverters
Uninterruptible power supplies (UPS)
Switched-mode power supplies (SMPS)

Procurement Notes

Verify the specific suffix 'SQDT' against official onsemi documentation to confirm exact pinout, marking code, and packaging configuration. Ensure that the requested quantity aligns with standard tube packaging requirements. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference the manufacturer part number with authorized distributor catalogs to avoid counterfeit components. Validate thermal interface material compatibility for the TO-247 package during integration.

Selection Notes

Select this component when system requirements demand a 950V blocking voltage and high current handling up to 150A. Consider the 1.69V saturation voltage for efficiency calculations in conduction-heavy applications. Evaluate the TO-247 package suitability for the available PCB space and heatsinking infrastructure. Compare switching speed characteristics against alternative IGBT technologies if high-frequency operation is critical. Ensure gate drive voltage levels are compatible with the specified threshold requirements.

Part Context

This IGBT belongs to onsemi's discrete power semiconductor portfolio, targeting medium-to-high power conversion systems. It complements other devices in the FGY series, offering standardized mounting and electrical interfaces. The component supports designs requiring reliable performance under thermal stress. It fits within broader solutions for energy infrastructure and automation sectors.