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Product Detailed Parameters
- Description：IGBT H BRIDGE 1700V 18A I4PAK5
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：NPT
- Configuration：Half Bridge
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：18 A
- Power - Max：140 W
- Vce(on) (Max) @ Vge, Ic：6V @ 15V, 16A
- Current - Collector Cutoff (Max)：100 µA
- Input Capacitance (Cies) @ Vce：2.4 nF @ 25 V
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：i4-Pac™-5
- Supplier Device Package：ISOPLUS i4-PAC™
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Overview
The FII24N17AH1S is a dual N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 18 A at 25°C. The device has a typical on-state saturation voltage of 5.2 V. It operates within a temperature range of -55°C to +150°C and utilizes a through-hole installation style.
Feature Summary
- Dual configuration integrating two IGBTs in a single package for space-efficient circuit design
- High voltage capability rated at 1.7 kV for robust performance in demanding power applications
- Through-hole mounting structure suitable for standard PCB assembly processes
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix 'S' against official datasheets to confirm packaging or variant details, as distributor listings may not explicitly define its functional impact. Confirm RoHS compliance status directly with the manufacturer documentation. Ensure the dual configuration aligns with the target circuit topology requirements before procurement.
Selection Notes
Select this component when a dual IGBT configuration is required for high-voltage switching applications. The 1.7 kV rating supports medium-voltage systems. Consider the 18 A continuous current limit and 5.2 V saturation voltage for thermal management calculations. Verify that the through-hole package fits the available board space and assembly constraints.
Part Context
This part belongs to the IXYS FII24N17AH1 series of high-voltage IGBTs. It is designed for general-purpose power switching. The dual configuration allows for half-bridge or push-pull topologies without requiring separate discrete components, simplifying layout and reducing parasitic inductance compared to single devices.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official IXYS replacement guides or equivalent specifications from other manufacturers.
