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Product Detailed Parameters
- Description：IGBT F BRIDGE 2500V 23A 24SMPD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Configuration：Full Bridge
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：23 A
- Power - Max：100 W
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 20A
- Current - Collector Cutoff (Max)：10 µA
- Input Capacitance (Cies) @ Vce：1.19 nF @ 15 V
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：24-SMD Module, 9 Leads
- Supplier Device Package：24-SMPD
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Overview
The MMIX4G20N250 is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a half-bridge configuration within an SMPD-24 package designed for surface mount installation. The device supports a maximum collector-emitter voltage of 2.5 kV and delivers a continuous collector current of 23 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.1 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 100 W. It operates reliably between -55°C and +150°C.
Feature Summary
- Integrates two IGBTs in a single half-bridge module to reduce component count and board space.
- Utilizes the SMPD-24 package to enable direct surface mount technology integration.
- Engineered with silicon technology to withstand high blocking voltages up to 2.5 kV.
Applications
- High-voltage industrial motor drive systems
- Uninterruptible power supply (UPS) inverters
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet before ordering. Confirm that the SMPD-24 footprint matches your PCB layout requirements. Ensure thermal management solutions are compatible with the specified 100 W power dissipation limit under expected operating conditions. Check RoHS compliance status if required by your manufacturing standards.
Selection Notes
Select this component when a compact half-bridge solution is required for high-voltage applications. The 2.5 kV rating suits systems requiring significant isolation. Consider the 23 A current capability relative to your load demands. The surface mount package simplifies assembly compared to traditional through-hole alternatives but requires appropriate soldering profiles.
Part Context
This part belongs to IXYS' Standard series of discrete power semiconductors. It is distinct from the IXYT25N250CHV, which is a single IGBT with higher current capacity, and the IXGA20N250HV, another single IGBT variant. The MMIX4G20N250 specifically addresses needs for integrated half-bridge topologies in high-voltage environments.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Direct replacements require matching the half-bridge configuration, SMPD-24 package, and 2.5 kV voltage rating.
