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Product Detailed Parameters
- Description：IGBT H BRIDGE 600V 40A I4PAK5
- Series：-
- Mfr：IXYS
- Package：Bulk
- IGBT Type：NPT
- Configuration：Half Bridge
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Power - Max：125 W
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 25A
- Current - Collector Cutoff (Max)：600 µA
- Input Capacitance (Cies) @ Vce：1.6 nF @ 25 V
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：i4-Pac™-5
- Supplier Device Package：ISOPLUS i4-PAC™
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Overview
The FII40-06D is a single IGBT array configured as a half-bridge, manufactured by IXYS. It utilizes NPT (Non-Punch Through) technology and operates with a maximum collector-emitter voltage of 600 V. The device supports a continuous collector current of 40 A at 25°C and handles a maximum power dissipation of 125 W. Packaged in the ISOPLUS i4-PAC™ format for panel mounting, it features a TO-247 variant housing. The component is designed for high-power switching applications requiring robust thermal management and reliable performance.
Feature Summary
- Integrated half-bridge configuration combining an NPT IGBT switch with an anti-parallel diode within a single module.
- Utilizes ISOPLUS i4-PAC™ packaging to facilitate efficient panel mounting and thermal dissipation.
- Employs Non-Punch Through (NPT) silicon technology to ensure stable operation across varying temperature ranges.
Applications
- Induction heating systems
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific ordering suffix against the manufacturer's datasheet to confirm pinout compatibility and electrical ratings. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Confirm that the package type matches the intended PCB or heatsink interface requirements before finalizing orders.
Selection Notes
Select this component for designs requiring a compact half-bridge solution with moderate current handling capabilities. The ISOPLUS i4-PAC™ package offers superior thermal conductivity compared to standard discrete packages. Evaluate the 125 W power dissipation limit against the system's cooling strategy to ensure safe operating temperatures under peak load conditions.
Part Context
This part belongs to the IXYS discrete semiconductor portfolio, specifically within the IGBT array category. It is engineered for industrial power conversion where reliability and switching speed are critical. The integration of the diode reduces board space and simplifies circuit layout compared to using separate discrete components.
Replacement Considerations
Cross-reference with other IXYS ISOPLUS i4-PAC™ half-bridge modules for direct pin-compatible alternatives. Verify that substitute parts match the 600 V rating and 40 A current capacity to maintain system integrity without redesigning the thermal interface.
