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Product Detailed Parameters
- Description：IGBT TRANS 3000V 38A
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Configuration：Full Bridge
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：38 A
- Power - Max：150 W
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 22A
- Current - Collector Cutoff (Max)：35 µA
- Input Capacitance (Cies) @ Vce：2.2 nF @ 25 V
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：24-SMD Module, 9 Leads
- Supplier Device Package：24-SMPD
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Overview
The MMIX4B22N300 is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features a quad configuration with a collector-emitter maximum voltage of 3 kV and a continuous collector current of 38 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.7 V and supports a power dissipation of 150 W. Operating within a temperature range of -55°C to +150°C, it utilizes SMD/SMT mounting in a tube package.
Feature Summary
- Monolithic integration of bipolar MOS technology for high gain
- Quad configuration for compact circuit design
- High voltage capability up to 3 kV
Applications
- High voltage switching applications
- Power conversion circuits
- Industrial motor drives
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with IXYS or authorized distributors before procurement. Confirm that the SMD/SMT package type aligns with your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 150 W power dissipation rating under actual operating conditions.
Selection Notes
Select this component when a single package requires four isolated high-voltage switches. The 3 kV rating suits applications demanding significant isolation. Compare the 38 A continuous current against peak load requirements. Consider the -55°C to +150°C operating range for extreme environment suitability versus standard industrial ranges.
Part Context
This part belongs to the IXYS BIMOSFET family, which combines MOS input characteristics with bipolar output performance. The MMIX series specifically offers multi-channel integration, reducing board space compared to discrete solutions. It serves as a specialized solution for high-density power electronics requiring high voltage isolation within a single semiconductor structure.
Replacement Considerations
The MMIX4B20N300 is a similar high-voltage BIMOSFET from the same manufacturer. Verify if the slightly different current ratings or pinout compatibility meet your specific design constraints before substitution.
