IXA30PG1200DHG-TRR

Description：IGBT H BRIDGE 1200V 43A SMPD
Series：-

SKU:1067c25956c8 Category: IGBT Arrays Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT H BRIDGE 1200V 43A SMPD
Series：-
Mfr：IXYS
Package：Tape & Reel (TR)
IGBT Type：PT
Configuration：Half Bridge
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：43 A
Power - Max：150 W
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 25A
Current - Collector Cutoff (Max)：2.1 mA
Input Capacitance (Cies) @ Vce：-
Input：Standard
NTC Thermistor：No
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：9-SMD Module
Supplier Device Package：ISOPLUS-SMPD™.B

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IXA30PG1200DHG-TRR

Overview

The IXA30PG1200DHG-TRR is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 43 A at 25°C. The device utilizes XPT technology and is housed in an ISOPLUS-SMPD™.B surface-mount package with nine pins. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.9 V at 25 A, a gate-emitter leakage current of 500 nA, and a power dissipation rating of 150 W. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Utilizes IXYS XPT (eXtended Plateau Technology) for optimized switching performance and low saturation voltage.
Designed for high-efficiency power conversion applications requiring robust thermal management.
Features a compact surface-mount ISOPLUS-SMPD™.B package suitable for automated assembly.

Applications

High-frequency motor drives
Industrial power supplies
Uninterruptible power systems

Procurement Notes

Verify the specific suffix against official datasheets, as packaging variations such as tube or tape-and-reel configurations may exist within the product family. Confirm RoHS compliance status and check for any recent Product Change Notifications regarding package labeling or material updates prior to finalizing procurement specifications.

Selection Notes

Select this component based on its 1200 V blocking capability and 43 A current rating for medium-power applications. Ensure the thermal design accommodates the 150 W power dissipation limit. Verify that the gate drive requirements align with the standard input type and that the ISOPLUS-SMPD™.B footprint matches the target PCB layout constraints.

Part Context

This IGBT belongs to the IXA30 series from IXYS, which focuses on high-performance switching devices. The series incorporates XPT technology to balance conduction losses and switching speeds. The ISOPLUS-SMPD™.B package provides efficient heat transfer capabilities while maintaining a small form factor for dense circuit board implementations.