FII30-12E

Description：IGBT H BRIDGE 1200V 33A I4PAK5
Series：-

SKU:5099b4419198 Category: IGBT Arrays Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT H BRIDGE 1200V 33A I4PAK5
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：NPT
Configuration：Half Bridge
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：33 A
Power - Max：150 W
Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 20A
Current - Collector Cutoff (Max)：200 µA
Input Capacitance (Cies) @ Vce：1.2 nF @ 25 V
Input：Standard
NTC Thermistor：No
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：i4-Pac™-5
Supplier Device Package：ISOPLUS i4-PAC™

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FII30-12E

Overview

The IXYS FII30-12E is a power module integrating an NPT3 IGBT and a HiPerFRED diode in an ISOPLUS i4-PAC package. It features a collector-emitter voltage of 1200 V, a continuous collector current of 33 A at 25°C, and a typical saturation voltage of 2.4 V. The device includes a fast-recovery free-wheeling diode with a forward current rating of 25 A and a reverse recovery time of 130 ns. Thermal resistance from junction to case is 0.8 K/W for the IGBT and 2.3 K/W per diode.

Feature Summary

NPT3 IGBT technology providing positive temperature coefficient for easy paralleling and optimized resonant circuit performance
HiPerFRED diode offering fast reverse recovery, low operating forward voltage, and low leakage current
ISOPLUS i4-PAC package featuring isolated back surface, low coupling capacity, and industry standard outline

Applications

Single phaseleg buck-boost chopper
H bridge power supplies and induction heating
Four quadrant DC drives and controlled rectifiers
Three phase bridge AC drives

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer marking against the official datasheet specifications. Confirm that the physical dimensions and pinout match the ISOPLUS i4-PAC outline drawing. Ensure thermal interface material compatibility with the specified junction-to-case thermal resistance values for proper heat dissipation during operation.

Selection Notes

Select this module for applications requiring high voltage blocking capability and fast switching speeds. The integrated anti-parallel diode simplifies circuit design for inductive loads. Consider the thermal management requirements based on the specific junction-to-case resistance values provided in the electrical characteristics table.

Part Context

This component belongs to the IXYS FII series of insulated gate bipolar transistor modules. It combines advanced semiconductor technologies within a standardized mechanical footprint designed for industrial power electronics. The integration allows for compact system designs while maintaining robust electrical isolation and thermal performance.