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The IXYS FII50-12E is a single-phase leg IGBT module featuring an NPT3 IGBT and HiPerFRED diode in an ISOPLUS i4-PAC package. It supports a collector-emitter voltage of 1200 V, with continuous collector currents rated at 50 A (TC=25°C) and 32 A (TC=90°C). The typical saturation voltage is 2.0 V at 30 A. The integrated free-wheeling diode handles 48 A continuously at 25°C. Thermal resistance from junction to case is 0.6 K/W for the IGBT and 1.3 K/W per diode.
Verify datasheet version and manufacturer specifications before integration. Confirm thermal management requirements align with the specified junction-to-case thermal resistance values. Ensure gate drive voltages remain within the ±20 V limit to prevent device damage during operation.
Select this component for high-power applications requiring robust switching performance and reliable parallel operation. The NPT3 structure ensures safe operating area stability under short-circuit conditions. Evaluate thermal dissipation capabilities based on the specific ambient temperature and heatsinking configuration available in the target design.
This module belongs to the FII series of single-phase leg IGBT modules manufactured by IXYS. It integrates complementary switching and freewheeling components into a single industry-standard outline. The design targets industrial motor drives and power conversion systems where compact packaging and high reliability are critical.
No public confirmed substitute part numbers are available.