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Product Detailed Parameters
- Description：IGBT H BRIDGE 1200V 43A SMPD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Configuration：Half Bridge
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：43 A
- Power - Max：150 W
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 25A
- Current - Collector Cutoff (Max)：2.1 mA
- Input Capacitance (Cies) @ Vce：-
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：9-SMD Module
- Supplier Device Package：ISOPLUS-SMPD™.B
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Overview
The IXA30PG1200DHG-TUB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 43 A at 25°C. The device utilizes XPT technology to achieve a typical saturation voltage of 1.9 V. It is housed in an ISOPLUS-SMPD™.B surface-mount package with nine terminals. The component supports a junction temperature range from -55°C to +150°C and has a maximum power dissipation rating of 150 W.
Feature Summary
- Utilizes IXYS XPT (Extra Punch Through) technology for optimized trade-off between conduction losses and switching performance.
- Designed for surface-mount integration using the compact ISOPLUS-SMPD™.B module package.
- Features standard gate input configuration compatible with common driver circuits.
Applications
- High-frequency motor drive inverters
- Switched-mode power supply output stages
- Industrial inverter systems
Procurement Notes
Verify the specific suffix against official manufacturer documentation, as ordering codes may indicate variations in labeling or packaging format without altering electrical function. Confirm RoHS compliance status through current datasheets. Check for End-of-Life notifications or Product Change Notices regarding package updates or discontinuation before finalizing procurement plans.
Selection Notes
Select this component when a robust single IGBT solution is required for high-voltage applications up to 1200 V. The ISOPLUS-SMPD™.B package facilitates automated surface-mount assembly while providing adequate thermal management for moderate power levels. Ensure the design accounts for the specified 150 W power dissipation limit and appropriate heatsinking strategies within the operational temperature range.
Part Context
This part belongs to the IXA30 series of discrete IGBTs from IXYS, designed for general-purpose power switching. The series emphasizes reliability and efficiency in medium-power applications. The specific model integrates advanced silicon technologies to support modern power electronics requirements for industrial and consumer equipment.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative devices based on matching voltage ratings, current capabilities, and package dimensions.
