MMIX4B20N300

Overview

The MMIX4B20N300 is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It integrates an IGBT and a diode in a single package. The device features a collector-emitter voltage of 300 V. It supports a continuous collector current of 20 A at 25°C. The saturation voltage is typically 1.7 V. The maximum power dissipation is 100 W. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Combines IGBT and diode functions in a monolithic structure
• Designed for high-voltage applications up to 300 V
• Optimized for high gain and switching performance

Applications

• High voltage power supplies
• Motor control systems
• Induction heating equipment

Procurement Notes

Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with your design requirements. Confirm RoHS compliance status directly with the supplier or official documentation before procurement. Check for any recent product change notices that may affect pinout or electrical characteristics.

Selection Notes

Select this component when a compact solution for high-voltage switching is required. The monolithic integration reduces board space compared to discrete combinations. Ensure thermal management strategies account for the specified power dissipation limits under expected operating conditions.

Part Context

This part belongs to IXYS' BIMOSFET family, which combines bipolar and MOS technologies. These devices are designed to offer the low conduction losses of IGBTs with the ease of drive of MOSFETs. The MMIX series provides a robust solution for medium-power high-voltage applications.

Replacement Considerations

Check for direct replacements within the MMIX4B series, such as MMIX4B22N300, noting differences in current ratings. Verify pin compatibility and thermal resistance values when considering alternative manufacturers.