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The FJN3302RBU is an NPN epitaxial silicon transistor with built-in bias resistors, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device includes integrated bias resistors R1 and R2, both typically valued at 10 kΩ, with a resistor ratio of 1.0. Power dissipation is rated at 300 mW, with a junction temperature range up to 150 °C. The component is housed in a TO-92 package with three leads.
Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel versus ammo pack. Confirm availability status as distribution channels may list obsolete or discontinued inventory. Ensure compliance with RoHS directives and check for any process change notifications that might affect pinout or electrical characteristics before finalizing procurement.
Select this component when space-saving solutions are required due to its integrated bias network. Compare the 10 kΩ internal resistance values against external resistor requirements in similar designs. Evaluate the thermal resistance and power derating curves for ambient temperature conditions. Consider the DC current gain and saturation voltage specifications for load driving capabilities.
This part belongs to the FJN3302R series of NPN transistors with built-in resistors. Originally developed by Fairchild Semiconductor, the product line is now managed by onsemi. The series complements PNP variants like the FJN4302R, providing matched pairs for complementary push-pull configurations in digital logic and interface applications.
Check for direct equivalents from other manufacturers offering identical 10k/10k bias ratios and TO-92 packaging. Verify pinout compatibility (Emitter, Collector, Base) to ensure drop-in replacement feasibility without PCB redesign.