FJN3302RTA

Overview

The FJN3302RTA is a PNP epitaxial silicon digital transistor manufactured by onsemi. It integrates bias resistors within a single TO-92-3 Kinked Lead package for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 4.7 kOhms with a resistor ratio of 1. Power dissipation is rated at 300 mW, and the minimum DC current gain (hFE) is 20. Operating temperatures range from -55°C to +150°C, with an emitter-base voltage (VEBO) limit of 10 V.

Feature Summary

• Integrated bias resistors simplify circuit design by reducing component count.
• Single PNP configuration in a compact TO-92 package suitable for space-constrained applications.

Applications

• Switching circuits
• Inverter logic gates
• Interface circuits between logic families
• Driver circuits for low-power loads

Procurement Notes

Verify availability status as the FJN3301RTA variant is listed as End-of-Life. Confirm RoHS compliance details directly with the manufacturer or authorized distributors. Ensure the specific suffix RTA matches the required tape-and-reel packaging format for automated assembly processes.

Selection Notes

Select this component when a PNP digital transistor with built-in biasing is required for switching or interface roles. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements. Consider the thermal performance within the TO-92 package if high ambient temperatures are expected.

Part Context

This part belongs to the FJN3302R series of pre-biased bipolar transistors. It serves as the PNP counterpart to NPN variants like the FJN3301RTA. The series is designed to replace discrete resistor networks, offering a standardized solution for common logic interfacing tasks in consumer and industrial electronics.

Replacement Considerations

Public confirmed substitute part numbers: FJN3302RBU.