FJN3303RBU

Overview

The FJN3303RBU is a single NPN epitaxial silicon digital transistor manufactured by onsemi. It integrates bias resistors R1 and R2, both typically 22 kΩ, with a ratio of 1. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 300 mW. The device features a minimum DC current gain (hFE) of 56 at IC=5mA. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92 package.

Feature Summary

• Integrates dual bias resistors for simplified circuit design
• Optimized for high-speed switching applications
• Compatible with standard logic families

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix 'BU' against the manufacturer's official documentation to confirm packaging details and compliance status. Confirm availability as this component may be discontinued or subject to supply constraints. Ensure the ordering information matches the exact part number required for your bill of materials.

Selection Notes

Select this component when a single NPN transistor with integrated base and emitter resistors is required. The 22 kΩ resistor values are suitable for general-purpose switching. Verify that the 50 V rating and 100 mA current capacity meet the load requirements. Consider the TO-92 package size for through-hole mounting constraints.

Part Context

This component belongs to the FJN3303R series of Bias Resistor Built-In transistors. It serves as the NPN complement to the PNP FJN4303R. Originally developed by Fairchild Semiconductor, the product line was acquired by onsemi. The datasheet revision indicates an origin date of July 2002.

Replacement Considerations

The FJN4303R is documented as the complementary PNP device. No other direct substitutes are listed in the provided source material.