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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO92-3
- Series：-
- Mfr：onsemi
- Package：Cut Tape (CT),Tape & Box (TB)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：300 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
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Overview
The FJN3303RTA is a single NPN epitaxial silicon digital transistor manufactured by onsemi. It integrates internal bias resistors to simplify switching, inverter, interface, and driver circuit designs. The component features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Typical input resistance is 22 kOhms with a resistor ratio of 1. Power dissipation is rated at 300 mW, and the minimum DC current gain (hFE) is 56. It operates within a temperature range of -55°C to +150°C and is housed in a TO-92-3 Kinked Lead package.
Feature Summary
- Integrates built-in bias resistors for simplified circuit design
- Designed for high-speed switching applications
- Utilizes NPN epitaxial silicon technology
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify availability status carefully as this component may be discontinued or subject to limited supply. Confirm RoHS compliance details through official datasheets before integration. Check for process change notifications that might affect pinout or electrical characteristics. Ensure the specific TA suffix matches the required packaging format for your assembly line.
Selection Notes
Select this part when a single NPN digital transistor with 50V rating and 100mA current capacity is required. The 22kOhm typical input resistance suits standard logic interfaces. Consider the TO-92 package constraints for thermal management and board space. Verify if the integrated resistor ratio meets the specific drive requirements of the application.
Part Context
This device belongs to the FJN3303R series of bias resistor built-in transistors. It serves as a complement to other variants like the FJN4303R. The product falls under the broader category of discrete semiconductors, specifically digital transistors designed for replacing multiple discrete components in low-power switching roles.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Evaluate equivalent NPN digital transistors with similar VCEO, IC, and R1/R2 values from other manufacturers if sourcing is restricted.
