SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FJN3304RTA is a single NPN epitaxial silicon digital transistor manufactured by onsemi. It integrates bias resistors with a typical ratio of 1:2, featuring a base resistor (R1) of 4.7 kΩ and an emitter-base resistor (R2) of 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. It operates within a temperature range of -55°C to +150°C and dissipates up to 300 mW of power. Packaged in a TO-92-3 Kinked Lead through-hole configuration, it offers a minimum DC current gain (hFE) of 20.
Verify the specific suffix RTA against official datasheets to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and lead-free characteristics directly from the manufacturer's documentation before procurement. Ensure the component meets all environmental regulations required for the target assembly process.
Select this component when a single NPN digital transistor with a 1:2 resistor ratio is required. Compare the 50 V breakdown voltage and 100 mA current limits against circuit demands. Verify that the TO-92 package fits the board layout constraints and that the 300 mW power dissipation rating accommodates the thermal environment.
This part belongs to the FJN330xR series of pre-biased transistors. It serves as the NPN counterpart to PNP variants like the FJN4304RTA. The series is designed to replace discrete resistor networks, reducing component count and PCB space in switching and logic interface applications.
Check for direct equivalents such as the FJN3304RBU or other NPN digital transistors with identical 4.7kΩ/10kΩ resistor ratios and TO-92 packaging. Ensure pinout compatibility and electrical parameters match exactly before substitution.