SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FJN3306RBU is a Bias Resistor Built-In (BRBI) NPN epitaxial silicon transistor manufactured by onsemi. It integrates two internal bias resistors with a ratio of 1:1, typically configured as R1=22kΩ and R2=22kΩ, to simplify circuit design. The device supports a collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 100mA. Packaged in the TO-92 plastic cylindrical form factor, it operates within a junction temperature range up to 175°C and is designed for switching applications such as inverters, interface circuits, and driver stages.
Verify the specific suffix and manufacturer documentation when sourcing, as BRBI configurations can vary. Confirm the resistor values and tolerance against the official datasheet for the exact part number variant. Ensure the TO-92 package compatibility matches the target assembly process. Check for RoHS compliance status if required by the end product specifications.
Select this component when a compact NPN switching solution with built-in base biasing is required. It serves as a direct replacement for discrete resistor-transistor networks where space is constrained. Compare the 50V VCEO and 100mA IC limits against the load requirements. Consider the integrated resistor ratio for appropriate base drive current calculations in the specific application context.
This device belongs to the family of Bias Resistor Built-In transistors, which combine a bipolar junction transistor with on-chip resistive networks. These components are widely used in consumer electronics and industrial control systems to reduce assembly complexity. The TO-92 package provides a cost-effective solution for through-hole mounting in standard printed circuit board designs.
Publicly confirmed substitute part numbers for the FJN3306RBU were not identified in the available verified data.