FJN3306RTA

Overview

The FJN3306RTA is an NPN epitaxial silicon transistor manufactured by Fairchild Semiconductor, designed for switching applications with a built-in bias resistor. It features a collector-emitter voltage of 50 V and a continuous collector current of 0.1 A. The device includes internal resistors with a ratio of 1 (R1=22kΩ, R2=22kΩ) to simplify circuit design. It operates within a temperature range of -55°C to +150°C and is housed in a TO-92 package.

Feature Summary

• Integrated bias resistor network simplifies drive circuit requirements
• High DC current gain suitable for efficient switching operations
• Robust thermal performance across extended industrial temperature ranges

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entity onsemi due to corporate acquisitions. Confirm RoHS compliance status through official datasheets. Ensure the ordering suffix matches the required tape-and-reel or bulk packaging specifications for your assembly line.

Selection Notes

Select this component when a compact NPN switch with integrated base resistance is required. The built-in resistor eliminates external components, reducing board space. Verify that the 0.1 A current rating meets load requirements and that the 50 V breakdown voltage exceeds peak circuit voltages.

Part Context

This part belongs to the family of Bias Resistor Built-In transistors (BRBTs). These devices integrate a single NPN transistor with a specific resistor network to provide stable biasing. They are commonly used to replace discrete transistor-resistor combinations in digital logic interfaces and low-power switching tasks.

Replacement Considerations

The FJN4303R is documented as the complementary PNP device within the same series. For direct NPN replacements, verify pinout compatibility and electrical parameters against other BRBT models from Fairchild or onsemi.