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The FJN3310RTA is a single NPN pre-biased bipolar junction transistor manufactured by Fairchild Semiconductor. It features an epitaxial silicon construction housed in a TO-92-3 package with formed leads for through-hole mounting. The device supports a collector-emitter voltage of 40 V and a continuous collector current of 100 mA, with a power dissipation rating of 300 mW. It operates within a temperature range of -55°C to +150°C and includes built-in biasing resistors to simplify circuit design.
Verify the manufacturer designation as Fairchild Semiconductor, noting historical corporate transitions. Confirm the specific suffix RTA corresponds to the required tape-and-reel or bulk packaging configuration. Ensure RoHS compliance status aligns with project requirements. Cross-reference the datasheet revision date to confirm parameter validity against current design specifications.
Select this component when a compact NPN switch with integrated base biasing is required. The 40V rating suits low-voltage logic systems. Consider the 100mA current limit for load driving capabilities. The TO-92 form factor is ideal for space-constrained through-hole designs compared to surface-mount alternatives.
This part belongs to the family of pre-biased transistors designed to replace discrete resistor-transistor networks. It consolidates multiple components into a single three-pin package, reducing board space and assembly complexity while maintaining reliable switching performance for standard digital logic levels.
Consult official substitution guides for equivalent pre-biased NPN transistors from onsemi or other manufacturers. Verify pinout compatibility and electrical ratings match before swapping. Generic BJT replacements require external biasing resistors.