FJN3314RBU

Overview

The FJN3314RBU is an NPN epitaxial silicon digital transistor manufactured by onsemi, formerly Fairchild Semiconductor. It features a built-in bias resistor network with R1 at 4.7 kΩ and R2 at 47 kΩ. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 68, a saturation voltage of 0.3 V, and a transition frequency of 250 MHz. Power dissipation is rated at 300 mW within a TO-92 package.

Feature Summary

• Integrated bias resistor network for simplified circuit design
• High-speed switching capability with 250 MHz transition frequency
• Low saturation voltage for efficient power handling

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix 'BU' against official documentation to confirm packaging details, as datasheets may list standard variants like 'RTA'. Confirm availability status, as this component series has been discontinued by the manufacturer. Ensure compliance with RoHS directives if required for the target application environment.

Selection Notes

Select this component when a compact NPN digital transistor with integrated biasing is required. The 4.7 kΩ input resistor suits moderate drive levels. Verify that the 50 V collector-emitter rating and 100 mA current capacity meet the load requirements. Consider the TO-92 package constraints for thermal management in high-duty cycle applications.

Part Context

This part belongs to the FJN3314R series of bias resistor transistors. It serves as the NPN complement to the PNP FJN4314R device. The series is designed for general-purpose switching and logic interface tasks where space-saving integration of base resistors reduces board area and assembly complexity.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.