FJN3314RTA

Description：TRANS PREBIAS NPN 50V TO92-3
Series：-

SKU:c8dd2cb1c51b Category: Single, Pre-Biased Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V TO92-3
Series：-
Mfr：onsemi
Package：Cut Tape (CT),Tape & Box (TB)
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：4.7 kOhms
Resistor - Emitter Base (R2)：47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
Frequency - Transition：250 MHz
Power - Max：300 mW
Grade：-
Qualification：-
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3

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FJN3314RTA

Overview

The FJN3314RTA is a single NPN Silicon epitaxial digital transistor manufactured by onsemi. It integrates a bias resistor network within a TO-92-3 kinked lead package for through-hole mounting. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 300 mW. The device features a typical input resistance of 4.7 kOhms with a typical resistor ratio of 0.1. Minimum DC current gain (hFE) is specified at 68, while the emitter-base voltage (VEBO) is rated at 10 V. Operating temperatures range from -55 C to +150 C.

Feature Summary

Integrates monolithic bias resistors to replace external components
Designed for simplified circuit design and reduced board space
Utilizes NPN silicon epitaxial construction

Applications

General-purpose switching applications
Logic interface circuits
Driver stages for low-current loads

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance details via official documentation. Check for alternative sourcing options as distribution availability may be limited. Ensure storage conditions meet semiconductor handling standards to prevent degradation prior to assembly.

Selection Notes

Select this component when a single NPN digital transistor with integrated biasing is required in a through-hole TO-92 package. Verify that the 50 V voltage rating and 100 mA current capacity align with circuit requirements. Consider the specific 4.7 kOhm input resistance and 0.1 resistor ratio for proper biasing configuration in the target application.

Part Context

This part belongs to the FJN3314R series of digital transistors. It represents a discrete solution combining a transistor and bias network. The TO-92-3 kinked lead variant facilitates manual insertion or specific PCB layout needs compared to surface-mount alternatives.