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The FJN4302RTA is a PNP epitaxial silicon transistor with built-in bias resistors, manufactured by ON Semiconductor. It features a maximum collector current of -100 mA and a collector-emitter voltage rating of -50 V. The device integrates two resistors, R1 and R2, both nominally 10 kΩ, resulting in a resistor ratio of 1.0. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at -5 mA, a saturation voltage of -0.3 V at -10 mA, and a cutoff current of -0.1 μA. Thermal performance specifies a power dissipation of 300 mW and a junction-to-ambient thermal resistance of 416 °C/W. The component is housed in a TO-92 package.
Verify the specific ordering suffix against official documentation to confirm packing method details. Ensure compliance with RoHS standards and lead-free requirements as specified in the datasheet. Confirm that the part number matches the updated nomenclature following the Fairchild Semiconductor integration into ON Semiconductor systems.
Select this component when space-saving solutions are required for PNP switching tasks. The integrated bias network eliminates external base resistors, reducing board area. Verify that the -50 V voltage rating and -100 mA current limits meet the application's peak stress requirements. Consider the TO-92 package constraints for thermal management in enclosed environments.
This component belongs to the FJN4302R series of pre-biased transistors. Originally developed by Fairchild Semiconductor, it is now managed under the ON Semiconductor portfolio. The 'TA' suffix specifically denotes the TO-92 3L Ammo packing method, distinguishing it from bulk or tape-and-reel variants within the same electrical family.
Cross-reference with other PNP pre-biased transistors offering similar 10kΩ/10kΩ internal resistor ratios. Verify pinout compatibility and absolute maximum ratings before substitution.