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The FJN4303RTA is a single pre-biased PNP bipolar junction transistor manufactured by onsemi. It integrates base and emitter resistors to simplify circuit design. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 300 mW. The component operates within a temperature range of -55°C to +150°C. It utilizes a TO-92-3 kinked lead package for through-hole mounting.
Verify the specific suffix 'RTA' against the official datasheet to confirm the tape-and-reel packaging configuration, as this affects handling procedures. Confirm RoHS compliance status directly with the manufacturer documentation prior to integration. Ensure the procurement channel provides valid traceability records for the discontinued or limited supply status associated with this component series.
Select this component when a PNP digital transistor with integrated biasing is required for through-hole designs. The 50 V rating suits low-voltage logic systems. Verify that the 100 mA current limit meets load requirements. Consider the thermal resistance of the TO-92-3 package for power dissipation constraints in the final assembly environment.
This part belongs to the FJN430 series of single pre-biased bipolar transistors from onsemi. These devices are designed to replace discrete resistor-transistor combinations. The series offers various configurations to accommodate different input impedance needs while maintaining a compact footprint suitable for space-constrained electronic assemblies.
Public confirmed substitute part numbers: FJN4303RBU.