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The FJN4304RTA is a PNP epitaxial silicon transistor manufactured by onsemi, featuring built-in bias resistors. It operates with a collector-emitter voltage of -50 V and a collector current of -100 mA. The device includes an input resistor (R1) with a typical value of 47 kΩ and a resistor ratio (R1/R2) of 1. Key electrical characteristics include a DC current gain (hFE) of 68 at -5 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency of 200 MHz. Packaged in TO-92, it dissipates up to 300 mW.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Cross-reference datasheet revisions to validate electrical parameters match the intended application requirements before procurement.
Select this component for designs requiring integrated biasing to reduce external component count. Verify that the -50 V collector-emitter voltage rating exceeds the maximum operating voltage. Confirm thermal management capabilities align with the 300 mW power dissipation limit under expected ambient temperature conditions.
This part belongs to the FJN series of pre-biased PNP transistors. It serves as a complement to the NPN FJN3304R device within the same product family. The series is designed for general-purpose switching tasks where simplified drive circuits are beneficial.
Direct substitutes may include other PNP transistors with similar voltage ratings and integrated bias networks. Verify pinout compatibility and resistor values when replacing components in existing designs.