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The FJN4309RTA is a single pre-biased PNP bipolar junction transistor manufactured by Fairchild Semiconductor. It features an epitaxial silicon construction housed in a through-hole TO-92-3 package. The device supports a collector-emitter voltage of 40 V and a maximum collector current of 100 mA. It operates with a transition frequency of 200 MHz and dissipates up to 300 mW of power. The component integrates built-in bias resistors, simplifying circuit design by reducing external component count.
Verify the manufacturer origin, as the FJN4309 series has been transferred to onsemi. Confirm the specific datasheet version matches the required electrical characteristics. Ensure the TO-92-3 package type aligns with the PCB footprint requirements. Check for lead-free and RoHS compliance status if environmental regulations apply to the final assembly.
Select this component when a compact PNP solution with integrated biasing is required. The 100 mA current rating suits low-power switching tasks. The 40 V voltage limit defines the operational boundary. Consider the 200 MHz frequency response for high-speed digital signals. The TO-92-3 form factor dictates the physical layout constraints.
The FJN4309RTA belongs to the FJN4309 series of pre-biased transistors. This family includes variants like FJN4302, FJN4303, and FJN4307, which share similar structural designs but differ in internal resistor ratios and specific electrical ratings. The series provides space-saving alternatives to discrete resistor networks.
Equivalent parts include FJN4302RTA and FJN4303RBU from the same series. Verify that substitute components match the 40 V rating and 100 mA current capacity. Check if the internal bias resistor ratios are compatible with the existing circuit design before substitution.