FJNS3202RTA

FJNS3202RTA

$0.04
  • Description:TRANS PREBIAS NPN 50V TO92S
  • Series:-

SKU:1191bf98ed51 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V TO92S
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:300 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Short Body
  • Supplier Device Package:TO-92S

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FJNS3202RTA

Overview

The FJNS3202RTA is an NPN epitaxial silicon transistor featuring a built-in bias resistor network, designed for switching applications. It operates with a collector-emitter voltage of 50 V and supports a continuous collector current of 100 mA. The device dissipates up to 300 mW of power at 25°C ambient temperature. Key electrical characteristics include a DC current gain (hFE) of 30 at 5 mA, a saturation voltage of 0.3 V at 10 mA, and a transition frequency of 250 MHz. The internal resistors R1 and R2 are nominally 10 kΩ each, facilitating direct interface with logic circuits without external biasing components.

Feature Summary

  • Integrated bias resistor network simplifies circuit design by eliminating external base resistors.
  • Optimized for high-speed switching with a current gain bandwidth product of 250 MHz.
  • Low saturation voltage ensures efficient power handling in driver and interface applications.

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix 'RTA' against manufacturer documentation to confirm tape-and-reel packaging or specific binning requirements. Ensure compatibility with TO-92S package dimensions during PCB layout. Confirm that the component status is active, as datasheets may indicate obsolescence for older Fairchild Semiconductor part numbers.

Selection Notes

Select this component when a compact NPN switch with integrated base biasing is required. The 10 kΩ internal resistor ratio suits standard logic levels. Consider the 100 mA current limit and 300 mW power dissipation constraints. Verify thermal derating curves if operating above 25°C ambient temperature to ensure junction temperature remains within safe limits.

Part Context

This component belongs to the FJNS series of bias resistor-built-in transistors manufactured by Fairchild Semiconductor. It serves as the NPN complement to the PNP FJNS4202R. The device utilizes a TO-92S surface-mount package, distinguishing it from through-hole variants. It is engineered for low-cost, space-constrained digital switching solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with equivalent NPN BRTs having similar hFE, VCEO, and internal resistance values if replacement is necessary.

FAQ

What is the function of the internal resistors R1 and R2?

R1 and R2 form a voltage divider network that provides base biasing, allowing the transistor to be driven directly by logic signals without external resistors.

What is the maximum collector current for the FJNS3202RTA?

The absolute maximum collector current (IC) is rated at 100 mA.

How does the FJNS3202RTA relate to the FJNS4202R?

The FJNS3202RTA is the NPN complement to the PNP FJNS4202R, offering matched characteristics for complementary switching applications.

FJNS3202RTAFJNS3202RTA
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