FJNS4204RBU

Overview

The FJNS4204RBU is a PNP epitaxial silicon transistor with built-in bias resistors, manufactured by onsemi. It features a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The device includes two integrated resistors, R1 and R2, both nominally 47 kΩ. Key electrical characteristics include a DC current gain (hFE) of at least 68 at -5 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency of 200 MHz. Power dissipation is rated at 300 mW in the TO-92S package.

Feature Summary

• Integrated dual bias resistors for simplified circuit design
• High-speed switching capability with 200 MHz transition frequency
• Low saturation voltage for efficient power handling

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the manufacturer designation as onsemi, reflecting corporate acquisitions from Fairchild Semiconductor. Confirm the specific ordering suffix matches the required tape-and-reel or bulk packaging configuration. Ensure the component meets RoHS compliance standards if applicable to the target assembly process.

Selection Notes

Select this component for applications requiring a pre-biased PNP transistor with high input impedance. The integrated resistor network eliminates external components, reducing board space. Verify that the -50 V rating and -100 mA current limits accommodate the peak operational loads without exceeding thermal constraints.

Part Context

This part belongs to the FJNS series of bias resistor built-in transistors. It serves as the PNP complement to the NPN FJNS3204RBU. The series is designed to replace discrete transistor and resistor combinations in logic interface and driver stages.

Replacement Considerations

The FJNS3204RBU is the documented complementary NPN device within the same product family.