FJPF13007H1TU

Single Bipolar Transistors Overview

The FJPF13007H1TU is a high-voltage NPN silicon power transistor manufactured by onsemi. It is designed for switch-mode applications, featuring a collector-emitter voltage (VCEO) of 400 V and a collector-base voltage (VCBO) of 700 V. The device supports a continuous collector current of 8 A with a maximum power dissipation of 80 W in a TO-220 package. Key electrical parameters include a transition frequency (fT) of 4 MHz and a DC current gain (hFE) minimum of 26 at 2 A and 5 V. The saturation voltage is specified at 3 V under standard test conditions.

Single Bipolar Transistors Feature Summary

• High voltage capability suitable for demanding switching environments
• Fast switching speed optimized for high-frequency operation
• Robust thermal performance in through-hole packaging

Single Bipolar Transistors Applications

• Switching mode power supplies (SMPS)
• Electronic ballasts
• High voltage fast-switching circuits

Single Bipolar Transistors Procurement Notes

Verify the exact suffix against official datasheets to confirm pinout and electrical tolerances. Confirm RoHS compliance status as manufacturing processes evolve. Check for End-of-Life notices or obsolescence warnings from onsemi before finalizing procurement plans. Ensure the supplier provides valid traceability documentation for quality assurance purposes.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and moderate current handling are required in a single-ended configuration. Compare hFE ranges and saturation voltages against circuit requirements to ensure adequate drive margins. Consider thermal management solutions given the 80 W power dissipation rating in the TO-220 package. Verify compatibility with existing PCB footprints and mounting hardware constraints.

Single Bipolar Transistors Part Context

This part belongs to the FJP13007 series of high-voltage NPN transistors originally developed by Fairchild Semiconductor and now produced by onsemi. The series is engineered for robust performance in power conversion applications. The H1TU suffix typically denotes specific packaging and tape-and-reel or tube configurations depending on the manufacturer's current standards.

Single Bipolar Transistors Replacement Considerations

• MJE13007G

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for this transistor?

The maximum collector-base voltage (VCBO) is 700 V.

Is this transistor suitable for electronic ballast applications?

Yes, the datasheet explicitly lists electronic ballasts as a suitable application due to its high switching speed and voltage capability.

What is the minimum DC current gain specified?

The minimum DC current gain (hFE) is 26, measured at a collector current of 2 A and a collector-emitter voltage of 5 V.